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FFSH50120A - onsemi

Description: Max Junction Temperature 175 °C; Avalanche Rated 441 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery

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PCB Footprints
FFSH50120A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FFSH50120A-1
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3D Models
FFSH50120A - onsemi  - 3D model - Transistor Outline, Vertical - FFSH50120A-1
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FFSH50120A Details

  • Manufacturer Part Number:

    FFSH50120A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-2

  • Manufacturer Package Code:

    340CL

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    5.98

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    280 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    77 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    736 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

FFSH50120A Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The device can withstand voltage stress up to 1.5 times the maximum rated voltage for a short duration. However, it's recommended to operate within the specified voltage range for reliable operation.
  • Yes, but ensure that the device is properly bypassed and decoupled to minimize high-frequency noise. Also, consider the device's switching characteristics and ensure it meets your application's requirements.
  • Use a transient voltage suppressor (TVS) or a zener diode to clamp voltage transients. Also, ensure proper PCB layout and routing to minimize electromagnetic interference (EMI).

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FFSH50120A Overview

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