Description:Max Junction Temperature 175 °C; Avalanche Rated 26 mJ; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Low Vf @ TJ:175 °C
A good PCB layout for optimal thermal performance involves placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Refer to onsemi's application note AND9093/D for more details.
To ensure reliable operation in high-temperature environments, follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Also, consider derating the device's power handling capability according to the temperature derating curve provided in the datasheet.
The recommended gate drive voltage is 10-15V, and the recommended gate drive current is 1-2A. However, the optimal gate drive voltage and current may vary depending on the specific application and switching frequency. Consult onsemi's application note AND9093/D for more information.
To protect the device from EOS and ESD, use a suitable input filter, such as a TVS diode or a zener diode, to clamp voltage transients. Also, follow proper handling and storage procedures to prevent ESD damage. Consult onsemi's application note AND9093/D for more information.
The recommended wire bonding technique is ultrasonic wedge bonding, and the recommended soldering technique is reflow soldering. Consult onsemi's packaging information document, PB15544, for more details on wire bonding and soldering guidelines.
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