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FFSP0865A - onsemi

Description: Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery

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PCB Footprints
FFSP0865A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−2LD CASE 340BB ISSUE O
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3D Models
FFSP0865A - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−2LD CASE 340BB ISSUE O
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FFSP0865A Details

  • Manufacturer Part Number:

    FFSP0865A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-2

  • Manufacturer Package Code:

    340BB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    49 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    13 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    98 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

FFSP0865A Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Refer to onsemi's application note AND9093/D for more details.
  • To ensure reliable operation in high-temperature environments, follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Also, consider derating the device's power handling capability according to the temperature derating curve provided in the datasheet.
  • The recommended gate drive voltage is 10-15V, and the recommended gate drive current is 1-2A. However, the optimal gate drive voltage and current may vary depending on the specific application and switching frequency. Consult onsemi's application note AND9093/D for more information.
  • To protect the device from overvoltage and overcurrent conditions, use a suitable voltage regulator and overcurrent protection circuitry. Consider using a TVS diode or a zener diode for overvoltage protection and a current sense resistor with a comparator or a dedicated overcurrent protection IC for overcurrent protection.
  • The recommended ESD protection method for the FFSP0865A involves using a TVS diode or a zener diode with a suitable capacitance value to absorb ESD pulses. Additionally, follow proper PCB design and handling practices to minimize the risk of ESD damage.

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FFSP0865A Overview

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