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FMV23N50ES - FUJI ELECTRIC

Description: N channel silicon power mosfet

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PCB Footprints
FMV23N50ES - FUJI ELECTRIC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F(SLS)
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3D Models
FMV23N50ES - FUJI ELECTRIC  - 3D model - Transistor Outline, Vertical - TO-220F(SLS)
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FMV23N50ES Details

  • Manufacturer Part Number:

    FMV23N50ES

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220F(SLS), 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Fuji Electric Co Ltd

  • YTEOL:

    3

  • Additional Feature:

    LOW NOISE

  • Avalanche Energy Rating (Eas):

    767.3 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.245 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    92 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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FMV23N50ES Overview

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