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FQA40N25 - onsemi

Description: Low Gate Charge ( Typ. 85nC); 40A, 250V RDS(on) = 70mΩ(Max.) @VGS = 10 V, ID = 20A; Low Crss ( Typ. 70pF); 100% Avalanche Tested

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PCB Footprints
FQA40N25 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 6
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FQA40N25 - onsemi  - 3D model - Transistor Outline, Vertical - 6
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FQA40N25 Details

  • Manufacturer Part Number:

    FQA40N25

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.88

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    280 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    590 ns

  • Turn-on Time-Max (ton):

    1200 ns

FQA40N25 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQA40N25 is typically defined by the voltage and current ratings. The device can safely operate up to 250°C junction temperature, 25V drain-source voltage, and 40A continuous drain current.
  • To ensure proper thermal management, a heat sink with a thermal resistance of less than 1°C/W is recommended. The device should be mounted on a PCB with a copper area of at least 1 square inch, and thermal interface material should be used to minimize thermal resistance.
  • The recommended gate drive voltage for the FQA40N25 is between 10V and 15V. A higher gate drive voltage can reduce the on-state resistance, but may also increase the switching losses.
  • To protect the FQA40N25 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The maximum allowed dv/dt for the FQA40N25 is typically around 10V/ns. Exceeding this value can cause the device to malfunction or fail.

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FQA40N25 Overview

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