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FQA70N15 - onsemi

Description: 70A, 150V RDS(on) = 28mΩ(Max.) @VGS = 10 V, ID = 35A; Low Gate Charge ( Typ. 135nC); 100% Avalanche Tested; 175°C Maximum Junction Temperature Rating; Low Crss ( Typ. 135pF)

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FQA70N15 Details

  • Manufacturer Part Number:

    FQA70N15

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQA70N15 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQA70N15 is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.
  • To ensure proper thermal management, it's crucial to provide a suitable heat sink, ensure good thermal interface material (TIM) contact, and maintain a low thermal resistance (RθJA) between the device and the heat sink. Consult the datasheet and application notes for specific thermal management guidelines.
  • The recommended gate drive voltage for the FQA70N15 is typically between 10V to 15V, depending on the application and switching frequency. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching frequency.
  • To minimize EMI, it's essential to use proper PCB layout techniques, such as separating high-frequency and low-frequency circuits, using shielding, and minimizing loop areas. Additionally, consider using EMI filters, snubbers, or other noise-reducing components as needed.
  • The maximum allowed voltage transient for the FQA70N15 is typically specified in the datasheet as the maximum drain-source voltage (VDS) rating. However, it's essential to consult the datasheet and application notes for specific guidance on voltage transients and avalanche ratings.

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FQA70N15 Overview

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