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FQD3N60CTM-WS - onsemi

Description: Low Crss ( Typ. 5pF); 2.4A, 600V, RDS(on) = 3.4Ω(Max.) @VGS = 10 V, ID = 1.2A; 100% avalanche tested; Low gate charge ( Typ. 10.5nC)

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Part Image FQD3N60CTM_WS onsemi

N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ω, TO-252 3L (DPAK), 30000-TAPE REEL