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FQPF47P06 - onsemi

Description: Low gate charge ( Typ. 84nC); 175°C maximum junction temperature rating; Low Crss ( Typ. 320pF); -30A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -15A; 100% avalanche tested

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PCB Footprints
FQPF47P06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220  Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B
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3D Models
FQPF47P06 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220  Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FQPF47P06
  • Part Number FQPF47P06
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (P-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B
  • Released Date Oct 3, 2022
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FQPF47P06 Details

  • Manufacturer Part Number:

    FQPF47P06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Avalanche Energy Rating (Eas):

    820 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF47P06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQPF47P06 can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure the FQPF47P06 is properly biased, make sure to provide a stable input voltage within the recommended range (typically 10-20V), and ensure the gate-source voltage is within the recommended range (typically -2 to 2V). Also, ensure the drain-source voltage is within the recommended range (typically 10-60V).
  • The recommended gate resistor value for the FQPF47P06 is typically in the range of 1kΩ to 10kΩ. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact onsemi support for more information.
  • Yes, the FQPF47P06 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliable operation.
  • To protect the FQPF47P06 from overvoltage and overcurrent, consider using a voltage regulator or a voltage clamp to limit the input voltage. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. It's also recommended to add a thermal protection circuit to prevent overheating.

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