Part Image

FZT849TA - Diodes Incorporated

Description: Bipolar Transistors - BJT NPN High Ct Low Sat

Download FZT849TA Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FZT849TA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FZT849TA-
click to zoom
3D Models
FZT849TA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - FZT849TA-
click to zoom

FZT849TA Details

  • Manufacturer Part Number:

    FZT849TA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

FZT849TA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FZT849TA is -55°C to 150°C.
  • Yes, the FZT849TA is designed for high-frequency applications, with a transition frequency (FT) of 2.5 GHz.
  • The maximum collector-emitter voltage (VCEO) for the FZT849TA is 40V.
  • Yes, the FZT849TA is suitable for switching applications due to its high switching speed and low saturation voltage.
  • No, the FZT849TA is a medium-power device, with a maximum collector current (IC) of 1A.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FZT849TA Overview

Use the download button to access the FZT849TA schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FZT84, or try a keyword search, such as Power Bipolar Transistors

Parts related to FZT849TA

Showing 0 results

FZT849TA Alternates

Showing results

Image Part Number Model
Part Image FZT849 Diodes Incorporated

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Part Image FZT849TC Diodes Incorporated

7A, 30V, NPN, Si, POWER TRANSISTOR

Part Image UFZT849TC Zetex / Diodes Inc

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Part Image UFZT849TA Diodes Incorporated

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Part Image UFZT849 Diodes Incorporated

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

For a full list of alternate parts for FZT849TA, check out Findchips.com