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FZT855TA - Diodes Incorporated

Description: NPN high current transistor, FZT855TA Diodes Inc FZT855TA NPN Bipolar Transistor, 5 A, 150 V SOT-223

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PCB Footprints
FZT855TA - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FZT855TA
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3D Models
FZT855TA - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - FZT855TA
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FZT855TA Details

  • Manufacturer Part Number:

    FZT855TA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    255

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    12.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    90 MHz

FZT855TA Frequently Asked Questions (FAQs)

  • A good PCB layout for the FZT855TA should prioritize thermal dissipation. Place the device near a thermal pad or a heat sink, and ensure good copper pour coverage around the device. Avoid routing high-current traces near the device to minimize thermal resistance.
  • For reliable operation in high-temperature environments, ensure the device is operated within its recommended temperature range (up to 150°C). Implement proper thermal management, such as heat sinks or thermal pads, and consider derating the device's current handling capabilities at higher temperatures.
  • The FZT855TA has built-in ESD protection, but it's still important to follow proper handling and assembly procedures to prevent ESD damage. Use ESD-safe materials, handle the device by the body or pins, and avoid touching the pins or die.
  • While the FZT855TA is primarily designed for low-frequency applications, it can be used in high-frequency switching applications with proper design considerations. Ensure the device is operated within its recommended frequency range, and consider the impact of parasitic inductance and capacitance on the device's performance.
  • For reliable soldering, follow the recommended soldering conditions: peak temperature 260°C, time above 217°C 30s, and time above 183°C 60s. Use a solder with a melting point above 217°C, and ensure the device is not exposed to excessive thermal stress during the soldering process.

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FZT855TA Overview

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Part Image FZT855TA Zetex / Diodes Inc

Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

Part Image FZT855TC Zetex / Diodes Inc

Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin