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G3R160MT12D - GeneSiC Semiconductor

Description: MOSFET 1200V 160mO TO-247-3 G3R SiC MOSFET

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PCB Footprints
G3R160MT12D - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - G2R1000MT17D
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3D Models
G3R160MT12D - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - G2R1000MT17D
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G3R160MT12D Details

  • Manufacturer Part Number:

    G3R160MT12D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

G3R160MT12D Frequently Asked Questions (FAQs)

  • GeneSic recommends a PCB layout with a thermal pad connected to a large copper area on the top and bottom layers, with multiple vias to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) below 150°C. Also, follow the recommended derating curves for current and voltage.
  • The G3R160MT12D can withstand voltage transients up to 1.5 times the maximum rated voltage (Vds) for a duration of 100 ns, but it's recommended to use a TVS diode or other protection circuitry to prevent damage from voltage spikes.
  • Yes, but it's crucial to ensure that the devices are properly matched, and the gate drive circuits are synchronized to prevent current imbalance and oscillations. GeneSic recommends consulting their application notes for parallel configuration guidelines.
  • GeneSic recommends a gate drive voltage of 10-15 V and a current of 1-2 A to ensure fast switching times and low losses. However, the optimal values may vary depending on the specific application and PCB layout.

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