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G3R40MT12D - GeneSiC Semiconductor

Description: N-Channel 1200 V 71A (Tc) 333W (Tc) Through Hole TO-247-3

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PCB Footprints
G3R40MT12D - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3
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3D Models
G3R40MT12D - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247-3
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G3R40MT12D Details

  • Manufacturer Part Number:

    G3R40MT12D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

G3R40MT12D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended thermal design guidelines. Also, consider derating the device's current rating at high temperatures.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. However, the exact values may vary depending on the specific application and PCB layout.
  • Use a TVS diode or a zener diode for overvoltage protection, and a fuse or a current sense resistor for overcurrent protection. Also, consider using a gate drive circuit with built-in overcurrent protection.
  • A dead time of 100-200ns is recommended to ensure proper switching and to prevent shoot-through currents. However, the exact value may vary depending on the specific application and PCB layout.

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