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G3R40MT12J - GeneSiC Semiconductor

Description: GENESIC SEMICONDUCTOR - G3R40MT12J - Silicon Carbide MOSFET, Single, N Channel, 75 A, 1.2 kV, 0.04 ohm, TO-263 (D2PAK)

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PCB Footprints
G3R40MT12J - GeneSiC Semiconductor PCB footprint - Other - Other - TO-263-7 _2022
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3D Models
G3R40MT12J - GeneSiC Semiconductor  - 3D model - Other - TO-263-7 _2022
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G3R40MT12J Details

  • Manufacturer Part Number:

    G3R40MT12J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

G3R40MT12J Frequently Asked Questions (FAQs)

  • GeneSic recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and follow the recommended PCB layout. Also, consider derating the device's current rating at high temperatures.
  • GeneSic recommends a gate drive voltage of 15V to 20V and a current of 2A to 5A for optimal switching performance. However, the exact values may vary depending on the specific application and requirements.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage to the device. GeneSic recommends using a TVS diode for OVP and a sense resistor with a comparator for OCP.
  • The G3R40MT12J is suitable for operating frequencies up to 100 kHz. However, the exact frequency range may vary depending on the specific application and requirements.

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