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G3R60MT07D - GeneSiC Semiconductor

Description: MOSFET 650V 60mohm TO-247-3 G3R SiC MOSFET N-Channel

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PCB Footprints
G3R60MT07D - GeneSiC Semiconductor PCB footprint - Other - Other - TO-247-3_2024
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3D Models
G3R60MT07D - GeneSiC Semiconductor  - 3D model - Other - TO-247-3_2024
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G3R60MT07D Details

  • Manufacturer Part Number:

    G3R60MT07D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Manufacturer:

    GeneSic Semiconductor Inc

G3R60MT07D Frequently Asked Questions (FAQs)

  • GeneSiC recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material (e.g., thermal tape or thermal grease) between the device and heat sink, and follow the recommended operating temperature range (TJ = -40°C to 175°C).
  • GeneSiC recommends a gate drive voltage of 15V to 20V and a current of 1A to 2A for optimal switching performance. However, the specific requirements may vary depending on the application and circuit design.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage from voltage and current surges. GeneSiC also recommends using a TVS diode or a zener diode for additional protection.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, extreme temperatures, or mechanical stress. Handle the devices by the body, not the leads, to prevent damage.

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