GBU806HD2G - Taiwan Semiconductor

GBU806HD2G Details

• Manufacturer Part Number:

  GBU806HD2G

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.80

• Manufacturer:

  Taiwan Semiconductor

• YTEOL:

  6.85

• Breakdown Voltage-Min:

  800 V

• Case Connection:

  ISOLATED

• Configuration:

  BRIDGE, 4 ELEMENTS

• Diode Element Material:

  SILICON

• Diode Type:

  BRIDGE RECTIFIER DIODE

• Forward Voltage-Max (VF):

  1.1 V

• JESD-30 Code:

  R-PSFM-T4

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Non-rep Pk Forward Current-Max:

  200 A

• Number of Elements:

  4

• Number of Phases:

  1

• Number of Terminals:

  4

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Output Current-Max:

  8 A

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Peak Reflow Temperature (Cel):

  260

• Reference Standard:

  AEC-Q101; UL RECOGNIZED

• Rep Pk Reverse Voltage-Max:

  800 V

• Surface Mount:

  NO

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  10