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GC20MPS12-247 - GeneSiC Semiconductor

Description: GENESIC SEMICONDUCTOR - GC20MPS12-247 - SILICON CARBIDE SCHOTTKY DIODE, TO-247

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GC20MPS12-247 - GeneSiC Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - GC20MPS12-247
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GC20MPS12-247 - GeneSiC Semiconductor  - 3D model - Transistor Outline, Vertical - GC20MPS12-247
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GC20MPS12-247 Details

  • Manufacturer Part Number:

    GC20MPS12-247

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-247-2

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    200 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    40 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    245 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GC20MPS12-247 Frequently Asked Questions (FAQs)

  • GeneSiC recommends a 4-layer PCB with a dedicated thermal layer, and a thermal pad connected to a heat sink or a thermal interface material. A good thermal management strategy involves keeping the junction temperature below 150°C, using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device.
  • Follow the recommended biasing and configuration guidelines in the datasheet, including setting the correct gate-source voltage, drain-source voltage, and current limits. Additionally, ensure the device is operated within the recommended operating conditions, and consider using a gate driver IC for proper gate control.
  • When paralleling devices, ensure each device has its own gate driver and sense resistor, and that the devices are matched for optimal current sharing. Also, consider the impact of parasitic inductance and capacitance on the PCB, and use a common source connection point to minimize voltage drops.
  • Use a combination of TVS diodes, zener diodes, and resistors to protect the device from overvoltage and overcurrent events. Implement ESD protection using ESD diodes or transient voltage suppressors, and follow proper handling and storage procedures to prevent ESD damage.
  • The GC20MPS12-247 is designed to meet or exceed industry standards for reliability and lifetime. Under normal operating conditions, the device can expect a lifetime of 10-15 years or more, depending on factors such as temperature, voltage, and current stress. Consult the datasheet and GeneSiC's application notes for more information.

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GC20MPS12-247 Overview

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