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GD10MPS12H - GeneSiC Semiconductor

Description: Schottky Diodes & Rectifiers 1200V 10A TO-247-2 SiC Schottky MPS

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PCB Footprints
GD10MPS12H - GeneSiC Semiconductor PCB footprint - Other - Other - TO-247-2_2024
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3D Models
GD10MPS12H - GeneSiC Semiconductor  - 3D model - Other - TO-247-2_2024
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GD10MPS12H Details

  • Manufacturer Part Number:

    GD10MPS12H

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    23 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    149 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

GD10MPS12H Frequently Asked Questions (FAQs)

  • A good PCB layout for the GD10MPS12H should prioritize thermal dissipation. Ensure a large copper area for the drain pad, and use thermal vias to connect it to a solid copper plane on the bottom layer. Keep the source and gate traces short and wide to minimize inductance.
  • Choose a gate driver that can provide a peak current of at least 2A to ensure reliable switching. Consider the driver's output voltage, rise and fall times, and propagation delay to ensure compatibility with the GD10MPS12H's gate characteristics.
  • The GD10MPS12H's high dv/dt rating requires careful consideration of the system's layout and component selection to minimize parasitic inductance and capacitance. Ensure that the PCB layout and component selection can handle the resulting high-frequency noise and voltage transients.
  • To ensure reliable operation at high temperatures, follow the recommended derating curves for the GD10MPS12H. Implement a robust thermal management system, including a heat sink and thermal interface material, and monitor the device's temperature using a thermistor or thermocouple.
  • The GD10MPS12H is sensitive to electrostatic discharge (ESD). Implement ESD protection measures during handling, storage, and assembly, such as using ESD-safe materials, wrist straps, and ionizers. Ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD arrays.

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GD10MPS12H Overview

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