GS-065-004-1-L-TR footprint, schematic symbol and 3D model by GaN Systems

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PCB Footprints

GS-065-004-1-L-TR - GaN Systems PCB footprint - Other - Other - GS-065-004-1-L-TR

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3D Models

GS-065-004-1-L-TR - GaN Systems - 3D model - Other - GS-065-004-1-L-TR

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Datasheet Download Datasheet
Stock & Prices Price & Stock for GS-065-004-1-L-TR
Part Number GS-065-004-1-L-TR
Manufacturer GaN Systems
Pin Count 10
Part Category Transistor E-mode GaN (10-Pin)
Package Category Other
Footprint Name Other - GS-065-004-1-L-TR
Released Date Feb 8, 2022
Last Modified Date Dec 12, 2023 6:26 AM UTC
Pinout / Pin List Click Here (Member Only)

GS-065-004-1-L-TR Details

Manufacturer Part Number:
GS-065-004-1-L-TR
Rohs Code:
Yes
Part Life Cycle Code:
Transferred
Package Description:
DFN-8
ECCN Code:
EAR99
Manufacturer:
GaN Systems
Case Connection:
SOURCE
Configuration:
SINGLE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
4 A
Drain-source On Resistance-Max:
0.57 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
0.3 pF
JESD-30 Code:
R-PDSO-N8
JESD-609 Code:
e3
Moisture Sensitivity Level:
3
Number of Elements:
1
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Packing Method:
TR, 13 INCH
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
7.1 A
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
GALLIUM NITRIDE

GS-065-004-1-L-TR Frequently Asked Questions (FAQs)

GaN Systems provides a reference design guide and thermal management guidelines in their application notes and design resources. It's recommended to follow these guidelines to ensure optimal performance and thermal dissipation.
Ensure proper thermal management by following the recommended PCB layout and thermal design guidelines. Also, implement over-temperature protection and monitoring in your system design to prevent overheating.
The recommended gate drive voltage is typically between 5V to 10V, and the current limit depends on the specific application and switching frequency. GaN Systems provides guidelines on gate drive requirements in their application notes and design resources.
Follow GaN Systems' EMI and EMC guidelines and recommendations for layout, shielding, and filtering to minimize electromagnetic interference and ensure electromagnetic compatibility.
GaN Systems provides reliability data and lifetime expectations in their datasheet and application notes. The device is designed to meet industry-standard reliability requirements, and its lifetime is dependent on various factors such as operating conditions, thermal management, and system design.

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GS-065-004-1-L-TR Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like GS-06, or try a keyword search, such as Power Field-Effect Transistors

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GS-065-004-1-L-TR - GaN Systems

GS-065-004-1-L-TR Details

GS-065-004-1-L-TR Frequently Asked Questions (FAQs)

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