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GS-065-030-2-L-TR - GaN Systems

Description: 650V, 30A, Enhancement mode GaN Transistor, 8x8 PDFN, Bottom-side cooled

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GS-065-030-2-L-TR - GaN Systems PCB footprint - Other - Other - GS-065-030-2-L-TR
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GS-065-030-2-L-TR Details

  • Manufacturer Part Number:

    GS-065-030-2-L-TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    DFN-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    GaN Systems

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    0.6 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

GS-065-030-2-L-TR Frequently Asked Questions (FAQs)

  • GaN Systems provides a reference design guide and thermal management application note that recommends a specific PCB layout, thermal pad design, and heat sink attachment method to ensure optimal thermal performance and minimize thermal resistance.
  • To prevent overheating, it's essential to implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan or liquid cooling system. Additionally, ensure that the device is operated within the recommended temperature range and that the junction temperature (TJ) is monitored and controlled.
  • GaN Systems recommends following proper PCB design and layout practices, such as using a solid ground plane, minimizing loop areas, and using shielding and filtering components to minimize EMI and RFI. Additionally, the device's switching frequency and rise/fall times can be adjusted to reduce electromagnetic emissions.
  • Yes, the GS-065-030-2-L-TR can be used in a parallel configuration to increase power handling capability. However, it's essential to ensure that the devices are properly synchronized and that the current sharing is balanced to prevent uneven stress and potential reliability issues.
  • GaN Systems provides reliability data and qualification reports that demonstrate the device's ability to meet or exceed industry standards for reliability and durability. The device is designed to operate for thousands of hours without significant degradation, and its reliability is backed by GaN Systems' warranty and support.

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GS-065-030-2-L-TR Overview

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