GS66508P-MR - GaN Systems

GS66508P-MR Details

• Manufacturer Part Number:

  GS66508P-MR

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Transferred

• ECCN Code:

  EAR99

• Manufacturer:

  GaN Systems

• Configuration:

  SINGLE

• DS Breakdown Voltage-Min:

  650 V

• Drain-source On Resistance-Max:

  0.063 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PBCC-N4

• JESD-609 Code:

  e4

• Moisture Sensitivity Level:

  3

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  P-CHANNEL

• Pulsed Drain Current-Max (IDM):

  72 A

• Surface Mount:

  YES

• Terminal Finish:

  Gold (Au) - with Nickel (Ni) barrier

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON