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HIP2100IBZT - Renesas Electronics

Description: The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with t

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HIP2100IBZT - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - M8.15-ren4
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HIP2100IBZT - Renesas Electronics  - 3D model - Small Outline Packages - M8.15-ren4
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HIP2100IBZT Details

  • Manufacturer Part Number:

    HIP2100IBZT

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOICN

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    M8.15

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2017-10-27

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    8

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    2 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.75 mm

  • Supply Current-Max:

    3 mA

  • Supply Voltage-Max:

    14 V

  • Supply Voltage-Min:

    9 V

  • Supply Voltage-Nom:

    12 V

  • Supply Voltage1-Max:

    114 V

  • Supply Voltage1-Min:

    7 V

  • Supply Voltage1-Nom:

    12 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.045 µs

  • Turn-on Time:

    0.045 µs

  • Width:

    3.9 mm

HIP2100IBZT Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The HIP2100IBZT should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.
  • The critical timing parameters include the input rise and fall times, output rise and fall times, and the propagation delay. These parameters are critical for ensuring reliable operation and should be carefully considered during design.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Also, follow proper PCB design and handling practices to minimize the risk of ESD damage.
  • The recommended power-up sequence is to apply VCC first, followed by the input signals. During power-down, remove the input signals first, and then remove VCC. This helps prevent unwanted switching and reduces the risk of damage.

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HIP2100IBZT Overview

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