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HIP2101EIBZT - Renesas Electronics

Description: The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required wit

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HIP2101EIBZT - Renesas Electronics - PCB symbol
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HIP2101EIBZT - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - M8.15C
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HIP2101EIBZT - Renesas Electronics - 3D model - Small Outline Packages - M8.15C
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HIP2101EIBZT Details

  • Manufacturer Part Number:

    HIP2101EIBZT

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOICN-EP

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    M8.15C

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    8

  • High Side Driver:

    YES

  • Input Characteristics:

    GATED SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.89 mm

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    PUSH-PULL

  • Output Peak Current Limit-Nom:

    2 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LSOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, LOW PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.68 mm

  • Supply Current-Max:

    3.4 mA

  • Supply Voltage-Max:

    14 V

  • Supply Voltage-Min:

    9 V

  • Supply Voltage-Nom:

    12 V

  • Supply Voltage1-Max:

    122 V

  • Supply Voltage1-Min:

    3 V

  • Supply Voltage1-Nom:

    12 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.056 µs

  • Turn-on Time:

    0.056 µs

  • Width:

    3.9 mm

HIP2101EIBZT Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The HIP2101EIBZT should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The critical timing parameters include the input rise and fall times, output rise and fall times, and the propagation delay. These parameters are critical for ensuring proper device operation and avoiding oscillations.
  • Check the PCB layout for noise coupling, ensure proper decoupling, and verify that the input and output capacitors are properly sized. Also, check for voltage regulator module (VRM) stability and ensure that the device is operated within its recommended operating conditions.
  • The recommended input capacitor is a 10uF to 22uF ceramic capacitor, and the recommended output capacitor is a 10uF to 47uF ceramic capacitor. The capacitor values may vary depending on the specific application and operating conditions.

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HIP2101EIBZT Overview

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