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HIP2210FRTZ - Renesas Electronics

Description: The HIP2210 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2210 features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.This driver features strong 3A source, 4A sink drivers with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applic

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HIP2210FRTZ - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - HIP2210FRTZ
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HIP2210FRTZ Details

  • Manufacturer Part Number:

    HIP2210FRTZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN

  • Pin Count:

    10

  • Manufacturer Package Code:

    L10.4X4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2020-06-23

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    8

  • High Side Driver:

    YES

  • Input Characteristics:

    SCHMITT TRIGGER

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    S-PDSO-N10

  • JESD-609 Code:

    e3

  • Length:

    4 mm

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    10

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    4 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC10,.16,32

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    0.75 mm

  • Supply Current-Max:

    1.69 mA

  • Supply Voltage-Max:

    18 V

  • Supply Voltage-Min:

    6 V

  • Supply Voltage-Nom:

    12 V

  • Supply Voltage1-Max:

    115 V

  • Supply Voltage1-Nom:

    12 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.04 µs

  • Turn-on Time:

    0.04 µs

  • Width:

    4 mm

HIP2210FRTZ Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The HIP2210FRTZ should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Use a soft-start circuit to limit the inrush current during power-up, and ensure that the input voltage rises slowly (e.g., 10-20 ms) to prevent voltage spikes. During power-down, ensure that the input voltage falls slowly to prevent back-EMF.
  • A low-ESR ceramic capacitor (e.g., X5R or X7R) with a value of 10-22 μF is recommended. This helps to filter out high-frequency noise and ensures stable operation.
  • Use a shielded inductor, keep the HIP2210FRTZ and inductor close together, and use a common-mode choke to reduce EMI. Also, ensure that the PCB layout is optimized for minimal radiation and conduction of EMI.
  • The maximum allowed junction temperature is 150°C. Ensure that the device is operated within the recommended temperature range to prevent overheating and ensure reliable operation.

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HIP2210FRTZ Overview

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