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HN1D03FTE85LF - Toshiba

Description: Diodes - General Purpose, Power, Switching Switching Diode 4 Circuit 0.1A 80V

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Symbol
HN1D03FTE85LF - Toshiba - PCB symbol
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PCB Footprints
HN1D03FTE85LF - Toshiba PCB footprint - Other - Other - SSOP6-P-0.65A (US6)_1
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3D Models
HN1D03FTE85LF - Toshiba - 3D model - Other - SSOP6-P-0.65A (US6)_1
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HN1D03FTE85LF Details

  • Manufacturer Part Number:

    HN1D03FTE85LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-74, 6 PIN

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.1

  • Application:

    GENERAL PURPOSE

  • Configuration:

    COMPLEX

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JESD-30 Code:

    R-PDSO-G6

  • Non-rep Pk Forward Current-Max:

    2 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    0.1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    0.3 W

  • Rep Pk Reverse Voltage-Max:

    85 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    80 V

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

HN1D03FTE85LF Frequently Asked Questions (FAQs)

  • The recommended land pattern for the HN1D03FTE85LF is a rectangle with dimensions of 2.5mm x 1.6mm, with a thermal pad of 2.1mm x 1.4mm in the center.
  • The HN1D03FTE85LF has a thermal pad on the bottom, which should be connected to a thermal plane on the PCB to dissipate heat. A thermal interface material (TIM) can be used to improve heat transfer.
  • The maximum operating temperature range for the HN1D03FTE85LF is -40°C to 150°C, with a storage temperature range of -40°C to 150°C.
  • To ensure the reliability of the HN1D03FTE85LF, follow proper handling and storage procedures, use a clean and dry environment, and avoid exposing the device to mechanical stress or electrical overstress.
  • The HN1D03FTE85LF has an ESD rating of 2kV human body model (HBM) and 200V machine model (MM). Handle the device with ESD-protective equipment and follow proper ESD handling procedures.

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HN1D03FTE85LF Overview

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