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IDB30E60 - Infineon

Description: Diode 600V 52.3A Switching TO-263 Infineon IDB30E60, SMT Fast Recovery Diode, 600V 30A, 178ns, 3-Pin TO-263

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IDB30E60 - Infineon PCB footprint - Other - Other - IDB30E60-2
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IDB30E60 Details

  • Manufacturer Part Number:

    IDB30E60

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220

  • Package Description:

    TO-263, 3/2 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    PD-CASE

  • Application:

    FAST RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    117 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    52.3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Power Dissipation-Max:

    142.9 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    50 µA

  • Reverse Recovery Time-Max:

    0.126 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

IDB30E60 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2019-07, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IDB30E60's VCC voltage. The driver should also have a propagation delay of less than 100ns to ensure proper switching. Consult Infineon's gate driver selection guide for more information.
  • According to Infineon's application note AN2019-07, the maximum allowed voltage overshoot during turn-on and turn-off is 10% of the DC-link voltage. Exceeding this limit may damage the device or affect its reliability.
  • Infineon recommends following their EMC design guidelines, which include using a shielded layout, minimizing loop areas, and using common-mode chokes to reduce electromagnetic interference. Additionally, ensure that the IDB30E60 is placed at least 10mm away from other components to minimize radiation.
  • The IDB30E60 is designed for high-frequency operation up to 100kHz. However, the recommended operating frequency range is between 10kHz to 50kHz for optimal efficiency and reliability. Consult Infineon's application notes for more information on frequency-dependent performance.

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IDB30E60 Overview

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