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IDH06G65C6 - Infineon

Description: Diode 650 V 16A Through Hole PG-TO220-2

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IDH06G65C6 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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IDH06G65C6 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDH06G65C6 Details

  • Manufacturer Part Number:

    IDH06G65C6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220, 2 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2017-08-30

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    650 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.35 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    38 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    16 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    54 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    20 µA

  • Reverse Test Voltage:

    420 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDH06G65C6 Frequently Asked Questions (FAQs)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the IDH06G65C6. It's essential to follow these guidelines to ensure optimal performance, reliability, and to prevent thermal-related issues.
  • When selecting a gate driver for the IDH06G65C6, consider factors such as the driver's output current capability, voltage rating, and propagation delay. Infineon recommends using a gate driver with a high current capability (> 2A) and a low propagation delay (< 50ns) to ensure proper switching and minimize losses. The 1EDC Compact and 1EDF Gate Driver families from Infineon are suitable options.
  • Monitor critical parameters such as drain-source voltage, drain current, and junction temperature to ensure safe operation. Implement fault detection and protection mechanisms, such as overcurrent protection, overvoltage protection, and thermal shutdown, using external circuitry or a dedicated IC like the Infineon TLE4961G. This will help prevent damage and ensure reliable operation.
  • To optimize the IDH06G65C6 for low-loss operation, focus on minimizing switching losses, conduction losses, and gate drive losses. Use a low-inductance PCB layout, optimize the gate drive circuitry, and consider using a dedicated gate driver with a low output impedance. Additionally, ensure proper thermal management and consider using a heat sink or thermal interface material to reduce junction temperature.
  • The IDH06G65C6 is designed to meet high reliability standards, with a typical lifetime of > 10 years. To ensure a long lifespan, follow proper handling and storage guidelines, operate the device within its recommended specifications, and implement adequate thermal management and fault detection mechanisms. Regularly monitor the device's performance and replace it if necessary to prevent catastrophic failures.

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IDH06G65C6 Overview

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