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IDH08G120C5XKSA1 - Infineon

Description: Infineon IDH08G120C5XKSA1 SiC Schottky Diode, 1200V 22.8A, 2+Tab-Pin TO-220

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IDH08G120C5XKSA1 - Infineon - PCB symbol
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PCB Footprints
IDH08G120C5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2-1
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3D Models
IDH08G120C5XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-2-1
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IDH08G120C5XKSA1 Details

  • Manufacturer Part Number:

    IDH08G120C5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 2 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.95 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    22.8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    126 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDH08G120C5XKSA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to dissipate heat, and ensure good airflow around the device. Also, follow the recommended PCB layout and thermal design guidelines.
  • A gate drive circuit with a high current capability (e.g., 1A to 2A) and a fast rise time (e.g., <10ns) is recommended. The gate drive voltage should be between 10V to 15V, and the gate resistance should be minimized to reduce switching losses.
  • Use a shielded enclosure, keep the device and PCB layout compact, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Also, ensure that the device is properly decoupled and that the PCB has a solid ground plane.
  • A forced-air cooling system or a liquid cooling system is recommended for high-power applications. Ensure that the cooling system is designed to maintain a junction temperature (TJ) below 150°C.

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IDH08G120C5XKSA1 Overview

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