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IDH20G120C5XKSA1 - Infineon

Description: Infineon IDH20G120C5XKSA1 SiC Schottky Diode, 1200V 56A, 2+Tab-Pin TO-220

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IDH20G120C5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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3D Models
IDH20G120C5XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDH20G120C5XKSA1 Details

  • Manufacturer Part Number:

    IDH20G120C5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    168 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    56 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    330 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    123 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDH20G120C5XKSA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling capabilities at high temperatures.
  • A non-inverting gate drive circuit with a gate resistor (Rg) between 10-20 ohms and a gate-source voltage (Vgs) of 10-15V is recommended. A gate driver IC like the Infineon 1EDF7131 can also be used.
  • Use a TVS diode or a zener diode for overvoltage protection. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • A dead time of 100-200 ns is recommended to ensure proper switching and to prevent shoot-through currents.

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IDH20G120C5XKSA1 Overview

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Part Image IDH20G120C5 Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC