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IDK10G65C5XTMA2 - Infineon

Description: Schottky Diodes & Rectifiers SIC DIODES

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PCB Footprints
IDK10G65C5XTMA2 - Infineon PCB footprint - Other - Other - PG-TO263-2_2023
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IDK10G65C5XTMA2 Details

  • Manufacturer Part Number:

    IDK10G65C5XTMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, 2 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    650 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    82 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    89 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    1700 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

IDK10G65C5XTMA2 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure optimal thermal performance. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure proper thermal management and consider using a heat sink or thermal interface material.
  • The recommended gate drive voltage for optimal switching performance is between 10 V and 15 V. However, the device can operate with a gate drive voltage as low as 6 V, but with reduced switching performance.
  • To protect the device from overvoltage and overcurrent conditions, it is recommended to use a TVS diode or a voltage clamp to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • The recommended dead time for minimizing shoot-through current is between 100 ns and 200 ns. However, the optimal dead time may vary depending on the specific application and switching frequency.

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IDK10G65C5XTMA2 Overview

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Part Image IDK10G65C5 Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 1 Element, 650V V(RRM), Silicon Carbide, TO-263