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IDL04G65C5XUMA2 - Infineon

Description: Schottky Diodes & Rectifiers SIC DIODES

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IDL04G65C5XUMA2 - Infineon - PCB symbol
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IDL04G65C5XUMA2 - Infineon PCB footprint - Other - Other - ThinPAK8x8
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IDL04G65C5XUMA2 - Infineon - 3D model - Other - ThinPAK8x8
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IDL04G65C5XUMA2 Details

  • Manufacturer Part Number:

    IDL04G65C5XUMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    8 X 8 MM, GREEN, PLASTIC, THINPAK, VSON-4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Non-rep Pk Forward Current-Max:

    21 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    4 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    62 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    70 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

IDL04G65C5XUMA2 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to improve heat dissipation. A minimum of 5 thermal vias with a diameter of 0.3 mm is recommended.
  • Infineon recommends using a soldering profile with a peak temperature of 260°C for 10-30 seconds. The device should be soldered using a no-clean flux and a solder alloy with a melting point above 217°C.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10 Ω to 22 Ω. A higher value can help reduce EMI, but may increase switching losses.
  • Infineon recommends using a TVS diode or a voltage clamp to protect the device from overvoltage conditions. For undervoltage protection, a voltage supervisor or a reset IC can be used to monitor the supply voltage and reset the device if it falls below a certain threshold.
  • The maximum allowed parasitic inductance depends on the specific application, but a typical value is around 1 nH to 5 nH. Higher parasitic inductance can lead to increased switching losses and reduced device performance.

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IDL04G65C5XUMA2 Overview

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