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IDP30E120 - Infineon

Description: Infineon IDP30E120, Fast Recovery Switching Diode, 1200V 50A, 380ns, 2+Tab-Pin TO-220

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PCB Footprints
IDP30E120 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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3D Models
IDP30E120 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDP30E120 Details

  • Manufacturer Part Number:

    IDP30E120

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SFM

  • Package Description:

    TO-220, 2 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    FAST SOFT RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.15 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    102 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    50 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    138 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    100 µA

  • Reverse Recovery Time-Max:

    0.243 µs

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDP30E120 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the specified temperature range to maintain reliability and performance.
  • Yes, the IDP30E120 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
  • The IDP30E120 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Additionally, consider adding external ESD protection devices, such as TVS diodes, to ensure robust protection against electrostatic discharge.

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IDP30E120 Overview

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