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IDP30E65D1XKSA1 - Infineon

Description: Infineon IDP30E65D1XKSA1 Switching Diode, 650V 60A, 2+Tab-Pin TO-220

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IDP30E65D1XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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IDP30E65D1XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDP30E65D1XKSA1 Details

  • Manufacturer Part Number:

    IDP30E65D1XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 2 PIN

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    ULTRA FAST RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    180 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    60 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    143 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Reverse Recovery Time-Max:

    0.095 µs

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDP30E65D1XKSA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using a thermal interface material to improve heat transfer between the device and the heat sink.
  • To minimize EMI, it is essential to follow good PCB layout practices, such as keeping sensitive analog traces away from noisy digital traces, using a solid ground plane, and minimizing loop areas. Additionally, consider using EMI filters or shielding to reduce radiation.
  • When selecting a gate driver for the IDP30E65D1XKSA1, consider the device's gate charge requirements, the desired switching frequency, and the power supply voltage. Look for a gate driver with a suitable output current capability, a low propagation delay, and a high common-mode transient immunity.
  • When paralleling multiple IDP30E65D1XKSA1 devices, ensure that each device has its own gate driver and that the gate drivers are properly synchronized. Additionally, consider the current sharing between devices, and ensure that the PCB layout is designed to minimize current imbalances and thermal gradients.

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IDP30E65D1XKSA1 Overview

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