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IDW20G120C5BFKSA1 - Infineon

Description: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

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IDW20G120C5BFKSA1 - Infineon - PCB symbol
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PCB Footprints
IDW20G120C5BFKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247
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3D Models
IDW20G120C5BFKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 247
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IDW20G120C5BFKSA1 Details

  • Manufacturer Part Number:

    IDW20G120C5BFKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.65 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    95 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    31 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    250 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    83 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDW20G120C5BFKSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure optimal thermal performance. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • Ensure good airflow around the device, and consider using a heat sink with a thermal interface material (TIM) to improve heat transfer. The device's thermal pad should be connected to a solid ground plane on the PCB to aid in heat dissipation.
  • The recommended gate drive voltage for the IDW20G120C5BFKSA1 is between 10 V and 15 V, with a maximum voltage of 20 V. A higher gate drive voltage can improve switching performance, but may also increase power losses.
  • Use a suitable overvoltage protection (OVP) circuit to prevent voltage spikes from damaging the device. Additionally, implement overcurrent protection (OCP) using a current sense resistor and a comparator to detect excessive currents.
  • The recommended dead time for the IDW20G120C5BFKSA1 is between 100 ns and 500 ns, depending on the specific application and switching frequency. A longer dead time can reduce electromagnetic interference (EMI), but may also increase power losses.

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IDW20G120C5BFKSA1 Overview

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