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IDW30G120C5BFKSA1 - Infineon

Description: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

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IDW30G120C5BFKSA1 - Infineon  - 3D model
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IDW30G120C5BFKSA1 Details

  • Manufacturer Part Number:

    IDW30G120C5BFKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.65 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    115 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    44 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    332 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    124 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDW30G120C5BFKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IDW30G120C5BFKSA1 is 175°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided in the datasheet, and to implement a proper cooling system to keep the junction temperature below 175°C.
  • The recommended gate resistor value for the IDW30G120C5BFKSA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IDW30G120C5BFKSA1 is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to follow the guidelines for high-frequency operation provided in the datasheet.
  • To protect the IDW30G120C5BFKSA1 from overvoltage and overcurrent, it is recommended to implement a proper protection circuit, such as a voltage clamp and a current sense resistor, and to follow the guidelines provided in the datasheet.

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IDW30G120C5BFKSA1 Overview

Use the download button to access the IDW30G120C5BFKSA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IDW30, or try a keyword search, such as Rectifier Diodes

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Part Image IDW10G120C5B Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 2 Element, 1200V V(RRM), Silicon Carbide, TO-247