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IPA60R190P6XKSA1 - Infineon

Description: IPA60R190P6XKSA1 N-Channel MOSFET, 20 A, 650 V CoolMOS P6, 3-Pin TO-220FP Infineon

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PCB Footprints
IPA60R190P6XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220FullPAK_2022
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3D Models
IPA60R190P6XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220FullPAK_2022
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IPA60R190P6XKSA1 Details

  • Manufacturer Part Number:

    IPA60R190P6XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    419 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    57 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA60R190P6XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPA60R190P6XKSA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1 K/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The maximum current rating of the IPA60R190P6XKSA1 is 60A, as specified in the datasheet. However, this rating is dependent on the device's operating conditions, such as temperature and voltage.
  • To protect the IPA60R190P6XKSA1 from overvoltage, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, ensure that the device is operated within its specified voltage rating.
  • The recommended gate drive voltage for the IPA60R190P6XKSA1 is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.

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