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IPA60R280CFD7XKSA1 - Infineon

Description: MOSFET N-CH TO220FP-3

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IPA60R280CFD7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220FullPAK_
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IPA60R280CFD7XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220FullPAK_
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IPA60R280CFD7XKSA1 Details

  • Manufacturer Part Number:

    IPA60R280CFD7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA60R280CFD7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPA60R280CFD7XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling of the IPA60R280CFD7XKSA1 is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a sufficient thermal conductivity. Additionally, consider using a thermal interface material to fill any gaps between the device and the heat sink.
  • The recommended gate drive voltage for the IPA60R280CFD7XKSA1 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the IPA60R280CFD7XKSA1 is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may be affected by high-frequency operation. Consult the datasheet and application notes for guidance on high-frequency operation.
  • To protect the IPA60R280CFD7XKSA1 from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit. Additionally, consider using a gate driver with built-in overcurrent protection and undervoltage lockout. Consult the datasheet and application notes for more information.

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IPA60R280CFD7XKSA1 Overview

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