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IPB240N04S4-1R0 - Infineon

Description: MOSFET N-CHANNEL_30/40V

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IPB240N04S4-1R0 - Infineon PCB footprint - Other - Other - PG-TO263-7-3_2
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IPB240N04S4-1R0 - Infineon  - 3D model - Other - PG-TO263-7-3_2
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IPB240N04S4-1R0 Details

  • Manufacturer Part Number:

    IPB240N04S4-1R0

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.001 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    960 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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IPB240N04S4-1R0 Overview

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Part Image IPB240N04S41R0ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET