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IPB50R199CP - Infineon

Description: Infineon IPB50R199CP N-channel MOSFET Transistor, 17 A, 550 V, 3-Pin TO-263

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IPB50R199CP - Infineon PCB footprint - Other - Other - IPB50R199CP-1
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IPB50R199CP Details

  • Manufacturer Part Number:

    IPB50R199CP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    GREEN, PLASTIC, TO-263, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    436 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.199 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    139 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB50R199CP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB50R199CP is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 150W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended PCB layout for the IPB50R199CP involves using a multi-layer PCB with a solid ground plane and a separate power plane. The device should be placed near the edge of the board to minimize thermal resistance. Use wide traces for power and ground connections, and keep sensitive analog signals away from the device to minimize noise coupling.
  • To protect the IPB50R199CP from overvoltage and overcurrent, use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider adding a fuse or a current-limiting resistor in series with the device to prevent damage from excessive current.
  • The recommended gate drive voltage for the IPB50R199CP is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but it may also increase power losses and reduce device reliability.

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