IPB720P15LMATMA1 footprint, schematic symbol and 3D model by Infineon

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IPB720P15LMATMA1 - Infineon PCB footprint - Other - Other - IPB720P15LMATMA1-2

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Part Number IPB720P15LMATMA1
Manufacturer Infineon
Pin Count 3
Part Category MOSFET (P-Channel)
Package Category Other
Footprint Name Other - IPB720P15LMATMA1-2
Released Date Apr 21, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IPB720P15LMATMA1 Details

Manufacturer Part Number:
IPB720P15LMATMA1
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Austria, Malaysia, Mexico
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
Infineon Technologies AG
YTEOL:
6
Avalanche Energy Rating (Eas):
2020 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
150 V
Drain Current-Max (ID):
41 A
Drain-source On Resistance-Max:
0.072 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
110 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
300 W
Pulsed Drain Current-Max (IDM):
164 A
Reference Standard:
IEC-61249-2-21; IEC-68-1
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Element Material:
SILICON

IPB720P15LMATMA1 Frequently Asked Questions (FAQs)

Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure good heat dissipation. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
Ensure good airflow around the device, use a heat sink if possible, and consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink. Monitor the device's junction temperature (Tj) to ensure it remains within the recommended operating range.
Infineon recommends a gate drive voltage of 15 V to ensure optimal switching performance and minimize power losses. However, the device can operate with a gate drive voltage as low as 10 V, but with reduced performance.
Use a suitable overvoltage protection (OVP) circuit to prevent voltage spikes from damaging the device. Implement overcurrent protection (OCP) using a current sense resistor and a comparator to detect excessive currents. Consider using a dedicated protection IC for added reliability.
Infineon recommends a dead time of at least 100 ns to ensure proper switching and minimize power losses. However, the optimal dead time may vary depending on the specific application and switching frequency.

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