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IPD90N06S4L-06 - Infineon

Description: Infineon IPD90N06S4L-06 N-channel MOSFET Transistor, 90 A, 60 V, 3-Pin TO-252 , -55+175 °C

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IPD90N06S4L-06 - Infineon - PCB symbol
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IPD90N06S4L-06 - Infineon PCB footprint - Other - Other - PG-TO252-3-11_2026-1.19
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IPD90N06S4L-06 Details

  • Manufacturer Part Number:

    IPD90N06S4L-06

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    4

  • Similar Group:

    TR0810021002YYYY10051223

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    67 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0063 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD90N06S4L-06 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IPD90N06S4L-06 is a TO-252-3 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 3.5mm x 3.5mm. It's recommended to follow the land pattern recommended by Infineon in their application note AN2013-01-001.
  • To ensure the reliability of IPD90N06S4L-06 in high-temperature applications, it's recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure proper thermal management by providing a heat sink or a thermal interface material (TIM) to reduce the junction temperature. It's also recommended to perform thermal simulations and testing to validate the design.
  • While IPD90N06S4L-06 is a fast-switching MOSFET, it's not recommended for high-frequency switching applications above 100kHz. The device is optimized for switching frequencies up to 50kHz. For higher frequencies, consider using a MOSFET with a lower gate charge and a faster switching time, such as the OptiMOS 5 family.
  • To protect IPD90N06S4L-06 from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store the device in an ESD-protected package. Additionally, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to protect the device from ESD events.
  • Yes, IPD90N06S4L-06 can be used in a parallel configuration to increase current capability. However, it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased gate charge. Additionally, consider the thermal management and ensure that the devices are properly heat-sinked to prevent thermal runaway.

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IPD90N06S4L-06 Overview

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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