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IPD90P03P4L04ATMA2 - Infineon

Description: MOSFET MOSFET_(20V 40V) P-channel PG-TO252-3-11

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PCB Footprints
IPD90P03P4L04ATMA2 - Infineon PCB footprint - Other - Other - PG-TO252-3-11-2021
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3D Models
IPD90P03P4L04ATMA2 - Infineon  - 3D model - Other - PG-TO252-3-11-2021
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IPD90P03P4L04ATMA2 Details

  • Manufacturer Part Number:

    IPD90P03P4L04ATMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    137 W

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD90P03P4L04ATMA2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD90P03P04L04ATMA2 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • A recommended PCB layout for the IPD90P03P04L04ATMA2 includes a solid ground plane, wide power traces, and a decoupling capacitor of at least 10uF placed close to the device.
  • Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a fuse or a current-limiting resistor.
  • The recommended gate drive voltage for the IPD90P03P04L04ATMA2 is between 10V and 15V, with a maximum gate current of 1A.

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