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IPI60R520CP - Infineon

Description: INFINEON - IPI60R520CP - MOSFET, N, TO-262

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PCB Footprints
IPI60R520CP - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO262-3
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3D Models
IPI60R520CP - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO262-3
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IPI60R520CP Details

  • Manufacturer Part Number:

    IPI60R520CP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-262AA

  • Package Description:

    GREEN, PLASTIC, TO-262, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    166 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    6.8 A

  • Drain-source On Resistance-Max:

    0.52 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    66 W

  • Pulsed Drain Current-Max (IDM):

    17 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPI60R520CP Overview

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Part Image IPI60R520CPAKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA