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IPL60R085P7AUMA1 - Infineon

Description: MOSFET N-Channel 650V 39A (Tc) 154W (Tc) Surface Mount PG-VSON-4

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IPL60R085P7AUMA1 - Infineon PCB footprint - Other - Other - PG-VSON-4_Thickness=1.1mm
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IPL60R085P7AUMA1 - Infineon  - 3D model - Other - PG-VSON-4_Thickness=1.1mm
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IPL60R085P7AUMA1 Details

  • Manufacturer Part Number:

    IPL60R085P7AUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    118 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    2A

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPL60R085P7AUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPL60R085P7AUMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IPL60R085P7AUMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPL60R085P7AUMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the IGBTs are matched in terms of threshold voltage and transconductance.
  • To protect the IGBT, use a voltage clamp or a surge protector to limit the voltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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