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IPP019N06NF2S - Infineon

Description: •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

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IPP019N06NF2S - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPP019N06NF2S
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IPP019N06NF2S - Infineon  - 3D model - Transistor Outline, Vertical - IPP019N06NF2S
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IPP019N06NF2S Details

  • Manufacturer Part Number:

    IPP019N06NF2S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • Avalanche Energy Rating (Eas):

    349 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    190 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    231 W

  • Pulsed Drain Current-Max (IDM):

    760 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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IPP019N06NF2S Overview

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