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IPP034N03LG - Infineon

Description: N-CHANNEL POWER MOSFET

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IPP034N03LG - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3
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IPP034N03LG - Infineon  - 3D model - Transistor Outline, Vertical - TO-220-3
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IPP034N03LG Details

  • Manufacturer Part Number:

    IPP034N03LG

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    70 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP034N03LG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IPP034N03LG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the SOA curves provided in the datasheet to ensure reliable operation.
  • The junction-to-case thermal resistance (RthJC) for the IPP034N03LG is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet, such as RthJA (junction-to-ambient) and RthCS (case-to-sink). A common approach is to use the following formula: RthJC = RthJA - RthCS.
  • The recommended gate drive voltage for the IPP034N03LG is not explicitly stated in the datasheet. However, as a general rule, it's recommended to use a gate drive voltage between 10V and 15V to ensure reliable switching and minimize power losses.
  • The IPP034N03LG is a power MOSFET designed for low-frequency switching applications. While it can be used in high-frequency applications, its performance may be limited by its internal capacitances and switching losses. It's recommended to evaluate the device's performance in your specific application and consider using a more suitable device if necessary.
  • The IPP034N03LG has an internal diode that can conduct during switching transitions. To handle this, you can use a diode snubber circuit or a gate driver with an integrated diode emulation feature. Additionally, you can use a Schottky diode in parallel with the device to reduce the voltage spike during switching.

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