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IPP50R500CEXKSA1 - Infineon

Description: IPP50R500CEXKSA1 N-Channel MOSFET, 7.6 A, 550 V CoolMOS CE, 3-Pin TO-220 Infineon

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PCB Footprints
IPP50R500CEXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220
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3D Models
IPP50R500CEXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220
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IPP50R500CEXKSA1 Details

  • Manufacturer Part Number:

    IPP50R500CEXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    129 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP50R500CEXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPP50R500CEXKSA1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • Proper cooling is crucial for the IPP50R500CEXKSA1. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended PCB layout and thermal design guidelines.
  • The recommended gate drive voltage for the IPP50R500CEXKSA1 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the IPP50R500CEXKSA1 is qualified for high-reliability and automotive applications. It meets the requirements of AEC-Q101 and is designed to withstand harsh environmental conditions. However, ensure that you follow the recommended design and testing guidelines for your specific application.
  • To protect the IPP50R500CEXKSA1 from overvoltage and overcurrent, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism. The OVP circuit should be designed to clamp the voltage below the maximum rated voltage, and the OCP mechanism should be able to detect and respond to overcurrent conditions within the specified time.

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IPP50R500CEXKSA1 Overview

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