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IPP60R199CP - Infineon

Description: IPP60R199 - 600V COOLMOS N-CHANN

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PCB Footprints
IPP60R199CP - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220
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3D Models
IPP60R199CP - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220
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IPP60R199CP Details

  • Manufacturer Part Number:

    IPP60R199CP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    436 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.199 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    139 W

  • Pulsed Drain Current-Max (IDM):

    51 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP60R199CP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPP60R199CP is -40°C to 175°C.
  • The recommended PCB footprint for the IPP60R199CP is a 5x6mm² pad with a 0.5mm thermal via.
  • Yes, the IPP60R199CP is suitable for high-frequency applications up to 1MHz due to its low switching losses and fast switching times.
  • To ensure reliability, it is recommended to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device.
  • The maximum allowed voltage derating for the IPP60R199CP is 10% of the maximum rated voltage to ensure reliable operation.

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IPP60R199CP Overview

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Part Image IPP60R199CPXKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB