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IPP65R225C7 - Infineon

Description: MOSFET 650V CoolMOS C7 Power Trans; 225mOhm

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IPP65R225C7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO_220
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3D Models
IPP65R225C7 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO_220
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IPP65R225C7 Details

  • Manufacturer Part Number:

    IPP65R225C7

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Package Description:

    GREEN, PLASTIC, TO-220, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.225 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    41 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP65R225C7 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the IPP65R225C7 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • The thermal resistance of the IPP65R225C7 can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RthJC) is 0.5 K/W, and the case-to-ambient thermal resistance (RthCA) depends on the specific heat sink and cooling system used. You can use the following formula: RthJA = RthJC + RthCA.
  • The recommended gate resistor value for the IPP65R225C7 depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the IPP65R225C7 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the switching losses, gate charge, and thermal performance when designing the application. Consult the datasheet and application notes for more information.
  • To ensure the reliability of the IPP65R225C7 in a high-temperature environment, it's essential to follow proper thermal design and management practices. This includes using a suitable heat sink, ensuring good thermal interface material, and monitoring the junction temperature. Additionally, consider using a thermistor or temperature sensor to monitor the temperature and implement over-temperature protection.

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