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IPP80P03P4L04AKSA2 - Infineon

Description: MOSFETs MOSFET_(20V 40V) P-Channel 30 V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1

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IPP80P03P4L04AKSA2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to220-3-21
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IPP80P03P4L04AKSA2 - Infineon  - 3D model - Transistor Outline, Vertical - to220-3-21
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IPP80P03P4L04AKSA2 Details

  • Manufacturer Part Number:

    IPP80P03P4L04AKSA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    410 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    137 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP80P03P4L04AKSA2 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The selection of a gate driver depends on the specific application requirements, such as the switching frequency, voltage, and current. Infineon recommends using their EiceDRIVER gate driver family, which is optimized for their power MOSFETs. The EiceDRIVER 1EDF5670B, for example, is a suitable option for the IPP80P03P4L04AKSA2.
  • The datasheet specifies a maximum voltage rating of 80V, but it's essential to consider voltage overshoots during switching. Infineon recommends limiting the voltage overshoot to 10% of the maximum voltage rating, which is 8V in this case, to ensure reliable operation and prevent damage to the device.
  • Proper cooling is crucial for the IPP80P03P4L04AKSA2. Ensure good thermal contact between the device and the heat sink, and consider using a thermal interface material (TIM) to minimize thermal resistance. The maximum allowed junction temperature is 150°C, and the device should be operated within the specified thermal boundaries to prevent overheating.
  • Infineon recommends following the soldering conditions specified in their application note AN2015-01, which includes guidelines for temperature, time, and soldering techniques to ensure reliable assembly and prevent damage to the device.

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