- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IPW65R099CFD7AXKSA1
- Part Number IPW65R099CFD7AXKSA1
- Manufacturer Infineon
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - pg-to247-3
- Released Date Sep 17, 2021
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IPW65R099CFD7AXKSA1 Details
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Manufacturer Part Number:
IPW65R099CFD7AXKSA1
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Factory Lead Time:
17 Weeks
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Manufacturer:
Infineon Technologies AG
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YTEOL:
6
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Avalanche Energy Rating (Eas):
125 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
650 V
IPW65R099CFD7AXKSA1 Frequently Asked Questions (FAQs)
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The maximum operating temperature range for IPW65R099CFD7AXKSA1 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -20°C to 125°C for optimal performance and reliability.
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Proper cooling is crucial for this device. Ensure good thermal conductivity between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended PCB layout and thermal design guidelines provided by Infineon.
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The recommended gate drive voltage for IPW65R099CFD7AXKSA1 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
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Yes, IPW65R099CFD7AXKSA1 is designed for high-reliability applications. It has undergone rigorous testing and meets the requirements for automotive and industrial applications. However, it's essential to follow the recommended design guidelines and operating conditions to ensure the device meets the required reliability standards.
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To minimize the impact of parasitic inductance and capacitance, follow the recommended PCB layout guidelines and use a layout that minimizes loop inductance. Additionally, use a gate driver with a high current capability and a low output impedance to reduce the effect of parasitic capacitance.
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IPW65R099CFD7AXKSA1 Overview
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